SiGe PMOSFET性能模拟  

Simulation of the SiGe PMOSFET Performance

作　　者：孟令琴[1] 费元春[1] 毛峥[2] 

机构地区：[1]北京理工大学电子工程系,北京100081 [2]解放军理工大学理学院,南京210016

出　　处：《固体电子学研究与进展》2003年第4期397-399,411,共4页Research & Progress of SSE

摘　　要：由于受热力学基本定律的限制 ,Si集成电路技术的发展已经日益接近极限 ,而 Si Ge材料的引入使得占据小于 1GHz频段的 Si产品可以进一步覆盖 2～ 30 GHz的 RF和无线通信市场。根据前人的材料研究工作 ,在普通 Si器件性能模拟的基础上 ,进一步研究长沟应变 Si Ge器件的模拟 ,引入了插值所得的近似因子以修正 silvaco中隐含的 Si Ge能带模型和迁移率参数。然后依据修正后的模型对 Si GeRestricted by the basic law of ther modynamics, silicon-based integrated circuit technology has been developed to i ts extreme, while the introduction of SiGe material pushes the silicon product w ith <1 GHz application frequency to the RF and wireless communication market co vering the 2～30 GHz frequency range. In this article, the more accurate simulat ion of strained long-channel SiGe devices was performed based on the researched work of silicon device simulation. And we also took a modified model to accompl ish the more accurate two-dimensional simulation of SiGe PMOSFET.

关 键 词：SIGE PMOSFET 性能模拟 能带模型 迁移率参数 硅锗材料 器件结构 

分 类 号：TN432[电子电信—微电子学与固体电子学]