RTD/HEMT多值逻辑(MVL)电路的PSPICE模拟  

PSPICE simulation on MVL circuit with RTD/HEMT structure

作　　者：刘宏伟[1] 牛萍娟[1] 郭维廉[1] 苗长云[1] 

机构地区：[1]天津工业大学信息与通信工程学院,天津300160

出　　处：《微纳电子技术》2004年第2期9-13,共5页Micronanoelectronic Technology

基　　金：天津市高等学校科技发展基金资助项目(20020711)

摘　　要：由共振隧穿二极管(RTD)与高电子迁移率晶体管(HEMT)相并联组成的结构是构成当前RTD高速数字电路常用的基本单元。由于RTD的负阻、双稳和自锁特性,由RTD/HEMT组成的逻辑电路可以大大减少器件的数目,用最少的器件完成一定的逻辑功能。本文对多值逻辑(MVL)中的文字逻辑门用PSPICE模拟软件进行了电路模拟,模拟结果与预期结果一致,并有助于指导该电路的设计。The structure of parallel combination of resonant tunneling diode(RTD)and high electron mobility transistor(HEMT)is a basic element of recent high speed RTD digital circuit. Because of the negative resistance,bistability and self-latching properties on RTD,the logic circuits composed of RTD/HEMT structure can be simplified by reducing numbers of device,to complete a definite logic function with minimum count of device. In this paper,the simulation of MVL literal function gate using PSPICE has been made. The simulated results are in agreement with that has been expected. It is helpful as a reference for designing on this type of circuit.

关 键 词：RTD/HEMT 多值逻辑电路 PSPICE模拟 共振隧穿二极管 高电子迁移率晶体管 电路设计 

分 类 号：TN791[电子电信—电路与系统]