AgO_x掩膜的制备和性能研究  

Preparation and properties investigation of AgOx mask films

作　　者：张约品[1,2] 阮昊[1] 沈德芳[1] 干福熹[1] 

机构地区：[1]中国科学院上海光学精密机械研究所 [2]宁波大学光电子功能材料研究所,浙江宁波315211

出　　处：《功能材料》2003年第2期156-157,共2页Journal of Functional Materials

基　　金：国家自然科学基金霉点资助项目(59832060);国家重点基础研究发展计划(973计划)资助项目(19990330)

摘　　要：磁控反应溅射制备了AgOx掩膜,用聚焦激光热效应装置测得的光透过特性,分析了AgOx掩膜的开关性能。结果表明,AgOx 掩膜在较低的温度作用下有良好的开关性能,反应AgOx Ag+O2可逆,适用于LSC-super-RENS光盘。用X-ray和TEM分析了热处理后的AgOx薄膜的成分结构,表明200℃热处理AgOx掩膜存在纳米量级Ag颗粒。In this work AgOx mask films for super resolution near-field structure application were prepared by reactive sputtering. The switch properties of AgOx mask films were analyzed by the transmittance property measured by the focused laser thermal effect experimental scheme. Results indicated that the mask films AgOx had excellent switch properties at low temperature, the reaction AgOx Ag+()2 was reversible, and the mask films were suitable for using in LSC-super-RENS disk. The composition and structure were investigated by X-ray diffraction spectrum and TEM. The results give out that the 200 °C calcined AgOx layers have silver nanometer grains for near-field scattering center.

关 键 词：磁控反应溅射 AgOx掩膜 聚焦激光热效应 开关性能 制备 光盘 

分 类 号：TQ594[化学工程—精细化工]