Silicene transistors——A review  

作　　者：屈贺如歌 王洋洋 吕劲 

机构地区：[1]State Key Laboratory for Mesoscopic Physics and School of Physics, Peking University [2]State Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications [3]School of Science, Beijing University of Posts and Telecommunications [4]Department of Nuclear Science and Engineering and Department of Materials Science and Engineering,Massachusetts Institute of Technology [5]Collaborative Innovation Center of Quantum Matter

出　　处：《Chinese Physics B》2015年第8期106-115,共10页中国物理B（英文版）

基　　金：supported by the National Natural Science Foundation of China(Grant Nos.11274016,11474012,and 1207141);the National Basic Research Program of China(Grant Nos.2013CB932604 and 2012CB619304)

摘　　要：Free standing silicene is a two-dimensional silicon monolayer with a buckled honeycomb lattice and a Dirac band structure. Ever since its first successful synthesis in the laboratory, silicene has been considered as an option for post-silicon electronics, as an alternative to graphene and other two-dimensional materials. Despite its theoretical high carrier mobility,the zero band gap characteristic makes pure silicene impossible to use directly as a field effect transistor(FET) operating at room temperature. Here, we first review the theoretical approaches to open a band gap in silicene without diminishing its excellent electronic properties and the corresponding simulations of silicene transistors based on an opened band gap.An all-metallic silicene FET without an opened band gap is also introduced. The two chief obstacles for realization of a silicene transistor are silicene’s strong interaction with a metal template and its instability in air. In the final part, we briefly describe a recent experimental advance in fabrication of a proof-of-concept silicene device with Dirac ambipolar charge transport resembling a graphene FET, fabricated via a growth-transfer technique.Free standing silicene is a two-dimensional silicon monolayer with a buckled honeycomb lattice and a Dirac band structure. Ever since its first successful synthesis in the laboratory, silicene has been considered as an option for post-silicon electronics, as an alternative to graphene and other two-dimensional materials. Despite its theoretical high carrier mobility,the zero band gap characteristic makes pure silicene impossible to use directly as a field effect transistor(FET) operating at room temperature. Here, we first review the theoretical approaches to open a band gap in silicene without diminishing its excellent electronic properties and the corresponding simulations of silicene transistors based on an opened band gap.An all-metallic silicene FET without an opened band gap is also introduced. The two chief obstacles for realization of a silicene transistor are silicene's strong interaction with a metal template and its instability in air. In the final part, we briefly describe a recent experimental advance in fabrication of a proof-of-concept silicene device with Dirac ambipolar charge transport resembling a graphene FET, fabricated via a growth-transfer technique.

关 键 词：SILICENE two-dimensional materials TRANSISTOR electronic device 

分 类 号：TN32[电子电信—物理电子学]