TeO_x和Ag-In-Sb-Te-O薄膜动态存储特性的测试  

Testing of Dynamic Recording Properties for TeO_x and Ag-In-Sb-Te- O Thin Films

作　　者：李青会[1] 顾冬红[1] 干福熹[1] 

机构地区：[1]中国科学院上海光学精密机械研究所,上海201800

出　　处：《中国激光》2003年第5期445-448,共4页Chinese Journal of Lasers

基　　金：国家自然科学基金 ( 5 983 2 0 60 )资助课题

摘　　要：采用真空蒸镀法制备了以TeOx 薄膜为记录层的可录光盘 ,采用溅射法制备了以Ag In Sb Te O为记录层的可擦重写光盘 ,并测试了这两种光盘在波长为 5 14 .5nm的动态存储特性。实验结果表明 ,可录光盘的载噪比在波长 5 14 5nm时达到 3 0dB ,波长 780nm时达到 41dB ;可擦重写光盘的载噪比在波长 5 14 5nm时达到 2 5dB ,波长 780nm时达到 3 8dB。对光盘载噪比偏低的可能原因及改进方法进行了讨论。光盘动态存储性能测试证明了这两种薄膜可用作蓝绿光波段高密度光存储介质。The recordable disks using TeOx thin films as the recording medium and the erasable disks using Ag-In-Sb-Te-O thin films as the recording medium were fabricated by the methods of vacuum evaporation and by the method of sputtering respectively. Dynamic recording properties of the two kinds of disks at 514.5 nm were reported. The carrier to noise ratio (CNR) of the recordable disk could reach about 30 dB at 514.5 nm and 41 dB at 780 nm; that of the erasable disk could reach about 25 dB at 514.5 nm and 38 dB at 780 nm. The reasons which caused the low CNR were discussed. The two kinds of films had the potential for using as blue-green shortwavelength high density optical storage media.

关 键 词：信息光学 光存储 溅射法 TeOx薄膜 Ag-In-Sb-Te-O薄膜 动态存储特性 

分 类 号：TQ597.3[化学工程—精细化工]