Investigations of structural phase transformation and THz properties across metal–insulator transition in VO_2/Al_2O_3epitaxial films  

作　　者：Mengmeng Yang Yuanjun Yang Bin Hong Yi Zhao Xiaoguang Li Yalin Lu Zhenlin Luo Chen Gao 

机构地区：[1]National Synchrotron Radiation Laboratory & Collaborative Innovation Center of Chemistry for Energy Materials,University of Science and Technology of China [2]CAS Key Laboratory of Materials for Energy Conversion, Department of Materials Science and Engineering, University of Science and Technology of China [3]Hefei National Laboratory for Physical Sciences at the Microscale and Department of Physics, University of Science and Technology of China

出　　处：《Progress in Natural Science:Materials International》2015年第5期386-391,共6页自然科学进展·国际材料（英文版）

基　　金：supported by the National Basic Research Program of China (2012CB922004 and 2010CB934501);the National Natural Science Foundation of China (51402281, 11374010, and 21327901);Anhui Province Natural Science Foundation (1508085QA06);the partial funding from the Fundamental Research Funds for the Central Universities (WK2310000043);Scientific Research Grant of Hefei Science Center of CAS (2015SRG-HSC028);China Postdoctoral Science Foundation (2013M540523 and 2014T70597)

摘　　要：Vanadium dioxide（VO2） epitaxial thin films on（0001）-oriented Al2O3 substrates were prepared using radio frequency（RF） magnetron sputtering techniques.To study the metal-insulator-transition（MIT） mechanism and extend the applications of VO2 epitaxial films at terahertz（THz） band,temperature-dependent X-ray diffraction（XRD） and THz time domain spectroscopy of the VO2 epitaxial films were performed.Both the lattice constants and THz transmission exhibited a similar and sharp transition that was similar to that observed for the electrical resistance.Consequently,the MIT of the VO2/Al2O3 epitaxial films should be co-triggered by the structural phase transition and electronic transition.Moreover,the very large resistance change（on the order of 103） and THz response（with a transmission modulation ratio of 87%） in the VO2/Al2O3 epitaxial heterostructures are promising for electrical switch and electro-optical device applications.Vanadium dioxide(VO_2) epitaxial thin films on(0001)-oriented Al_2O_3 substrates were prepared using radio frequency(RF) magnetron sputtering techniques.To study the metal-insulator-transition(MIT) mechanism and extend the applications of VO_2 epitaxial films at terahertz(THz) band,temperature-dependent X-ray diffraction(XRD) and THz time domain spectroscopy of the VO_2 epitaxial films were performed.Both the lattice constants and THz transmission exhibited a similar and sharp transition that was similar to that observed for the electrical resistance.Consequently,the MIT of the VO_2/Al_2O_3 epitaxial films should be co-triggered by the structural phase transition and electronic transition.Moreover,the very large resistance change(on the order of ~ 10~3) and THz response(with a transmission modulation ratio of ~87%) in the VO_2/Al_2O_3 epitaxial heterostructures are promising for electrical switch and electro-optical device applications.

关 键 词：VO2 EPITAXIAL thin film THZ-TDS METAL-INSULATOR TRANSITION Structural phase TRANSITION 

分 类 号：O484[理学—固体物理]