Sol-Gel法制备BST铁电薄膜及其性能分析  

Microstructure and Dielectric Properties of Sol-Gel Derived BST Thin Films

作　　者：张五星[1] 邹雪城[1] 王长安[1] 尹盛[1] 刘陈[1] 曾祥斌[1] 

机构地区：[1]华中科技大学电子科学与技术系,武汉430074

出　　处：《压电与声光》2004年第1期45-47,55,共4页Piezoelectrics & Acoustooptics

基　　金：国家自然科学基金资助项目(60306011)

摘　　要：用Sol-Gel法制备出表面致密,界面清晰的BST铁电薄膜。分析了BST薄膜的J-V特性,由于使用了不同的上下电极,导致J-V曲线的不对称,且在外延生长的Pt电极上制备的BST薄膜有较低的漏电流。分别在大气和干燥气氛下测量了BST薄膜的介电特性,分析结果表明:湿度对BST薄膜的介电特性有很大的影响,为了得到正确的介电特性,其测量必须在真空或干燥气氛下进行。BST thin films are fabricated by Sol-Gel method. The obtained BST thin films are well crystallized and have dense surface and clear interface. The J-V curves of BST films have asymmetric shape which is caused by different up and down electrodes. The BST thin films grown on eptaxial Pt electrode have lower leakage current. The dielectric properties are analyzed in dry atmosphere and humid condition, respectively. The results show that the dielectric properties of BST thin films are affected by the moisture greatly. In order to obtain accurate dielectric properties, the dielectric measurements of BST thin films should be taken in vacuum or dry atmosphere.

关 键 词：Sol—Gel 钛酸锶钡薄膜 介电特性 漏电流 

分 类 号：TN304[电子电信—物理电子学]