The Experimental Analysis of Cross-talk Effect for Mixed-mode IC＇s Based on SOI Structure  

作　　者：ZHANGGuoyan HUANGRu ZHANGXing WANGYangyuan 

机构地区：[1]InstituteofMicroelectronics,PekingUniversity,Beijing100871,China

出　　处：《Chinese Journal of Electronics》2004年第1期79-81,共3页电子学报（英文版）

摘　　要：The experimental study of cross-talk behavior is presented for mixed-mode integrated circuits based on SOI (Silicon-on-insulator) structure. Different strategies to reduce cross-talk are investigated. The influence of bulk contact, separation distance, the guard ring isolation and mesa isolation on the cross-talk has been compared. At the same time, the effect of load impedance on the cross-talk is also included. The results can serve as a guideline for designing low-noise coupling SOI mixed-mode IC's.

关 键 词：串话干扰 混合模式集成电路 SOI 硅上绝缘体 接触面积 间距 护圈隔离 

分 类 号：TN405[电子电信—微电子学与固体电子学]