偏置电压对射频/微波MEMS电容开关寿命的影响  

Effects of Bias Voltage on the Lifetime of Radio Frequency/Microwave MEMS Shunt Switches

作　　者：龙永福[1] 石艳玲[1] 赖宗声[1] 朱自强[1] 朱荣锦[1] 忻佩胜[1] 李炜[1] 

机构地区：[1]华东师范大学电子科学与技术系

出　　处：《微电子学》2004年第1期30-33,37,共5页Microelectronics

基　　金：国家重点基础研究项目(973)(G1999033105);国家杰出青年基金(69925409);上海市AM基金;上海市科技发展基金(015211066);上海市重点学科基金(012261028)共同资助

摘　　要：　理论分析了影响射频/微波MEMS电容开关寿命的因素:介质内的电场强度和可动薄膜对介质膜的冲击速度。用三种不同的偏置电压,对介质内电场强度和可动薄膜对介质膜的冲击速度进行了数值分析和比较。提出了在脉冲电压作用下,可得到可动薄膜对介质膜最小的冲击速度和介质内的最小电场强度,从而极大地提高MEMS电容开关运行的可靠性和寿命。实验验证了上述结论。Factors influencing the lifetime of radio frequency/microwave MEMS shunt switches,including the electric-field strength in the dielectrics and the impact velocity of movable membranes on the dielectric-coating,are investigated in this paper.Numerical analysis and comparison on the two factors are made using three different bias voltages.It can be concluded that,on the action of pulsed voltage,the smallest impact velocity and electric-field strength have been obtained,greatly improving the reliability and lifetime of MEMS shunt switches,which has been demonstrated by experimental results.

关 键 词：偏置电压 射频/微波电路 MEMS电容开关 寿命 电场强度 冲击速度 

分 类 号：TM564[电气工程—电器]