硅的深槽刻蚀技术研究  

A Study on Silicon Deep Etching Technology

作　　者：欧益宏[1] 周明来[1] 张正元[2] 

机构地区：[1]解放军后勤工程学院,重庆400016 [2]模拟集成电路国家重点实验室,重庆400060

出　　处：《微电子学》2004年第1期45-47,共3页Microelectronics

摘　　要：　研究了采用等离子刻蚀机对硅进行深槽刻蚀中掩蔽层的选择及横向腐蚀的抑制等工艺问题。实验发现,以氟基气体作为工艺气体,铝或铝合金作为掩蔽层时,可以获得极高的选择比;通过增大射频功率,改变气体组分,气体流量等方法,可以较好地解决等离子刻蚀中的各向同性问题。Mask selection and lateral etching control in Si deep etching process technology are studied.Experimental results show that higher selectivity can be achieved when fluorine-based gas is used as processing gas and Al or Al alloys are introduced as mask layers.And isotropic etching can be achieved by increasing RF power,changing the gas composition and flow.

关 键 词：硅 深槽刻蚀技术 等离子刻蚀机 掩蔽层 氟基气体 各向异性 

分 类 号：TN304.12[电子电信—物理电子学]