Bi:BGO单晶相位共轭效应的研究  

Investigation of Phase Conjugation in Bi:BGO Crystal

作　　者：李铭华[1] 刘彩霞[1] 贾晓林[1] 徐玉恒[1] 高元凯[1] 孙光跃 

机构地区：[1]哈尔滨工业大学

出　　处：《压电与声光》1992年第6期44-47,共4页Piezoelectrics & Acoustooptics

基　　金：国家自然科学基金资助项目

摘　　要：本文采用提拉法生长BGO单晶和Bi:BGO单晶,测试晶体相位共轭反射率和响应时间,发现Bi:BGO晶体相位共轭反射率比BGO晶体提高了一倍。研究了Bi:BGO晶体相位共轭反射率与外电场的关系,以及Bi:BGO晶体的光折变机理。In this paper, BGO and Bi:BGO crystals have been grown using CZ method. The reflectivities and response times of phase conjugation have been measured. The reflectivity of Bi:BGO is found to be two tirries of that of BGO crystal. The relation between reflectivity and applied electric field, and the mechanism of photorefraction of BirBGO are studied.

关 键 词：单晶 相位共轭 光折变 锗酸铋晶体 

分 类 号：O711.4[理学—晶体学]