脉冲激光淀积MgF_2薄膜的制备及性质研究  

Preparation and Properties of MgF2 Thin Film by Pulsed Laser Deposition

作　　者：于琳[1] 韩新海[1] 王冠中[1] 揭建胜[1] 廖源[1] 余庆选[1] 方容川[2] 

机构地区：[1]中国科学技术大学结构分析开放研究实验室,安徽合肥230026 [2]中国科学技术大学物理系,安徽合肥230026

出　　处：《量子电子学报》2004年第1期48-50,共3页Chinese Journal of Quantum Electronics

基　　金：国家自然科学基金资助项目(59976038)

摘　　要：本文采用脉冲激光淀积方法(PLD)制备了MgF2光学薄膜,并对其表面形貌以及光学性质进行了测试分析, X射线光电子能谱分析显示MgF2样品具有很好的化学组分配比, F/Mg原子比在1.9-2.1之间,接近于体材料;在可见光波段其光学透过率为60％-80％,在红外波段更是达到了90％以上,由KK变换计算MgF2的折射率大约为1.39,也接近于体材料的折射率1.38。Optical thin films of MgF2 were successfully fabricated by pulsed laser deposition technique. The morphology and optical properties were investigated. The transmittance was 60%-80% in the visible light range, and more than 90% in the infrared range. The XPS showed the atom ratio of F: Mg in the obtained film was 1.9-2.1, very close to the bulk material. The refractive index of MgF2 thin film was -1.39 resulted from K-K calculation, also close to the value of 1.38 of the bulk MgF2.

关 键 词：脉冲激光淀积 MgF2薄膜 折射率 透过率 薄膜光学 

分 类 号：O484.41[理学—固体物理] TN304[理学—物理]