BCCD器件解析物理模型与仿真研究  

An Analytical Physical Model and Its Simulation for BCCD

作　　者：于奇[1] 王颖[2] 熊平[2] 孙杰[1] 梅丁蕾[1] 杨谟华[1] 

机构地区：[1]电子科技大学,四川成都610054 [2]重庆光电技术研究所,重庆400060

出　　处：《半导体光电》2004年第1期5-8,共4页Semiconductor Optoelectronics

基　　金：CCD图像传感器国家重点实验实室资助项目

摘　　要：　基于半导体图像传感器CCD的物理图像和相应的基本特性微分方程组,经过离散和线性化处理,并引用解三对角矩阵方程的递归算法,实现了其解析模型求解。据此及其相关的编程软件,对电注入埋沟CCD器件进行了仿真测试。结果表明,随着栅长减小、栅间隙长度增加和沟道深度减小,传输栅电荷容量约从6.5×106下降到6.1×106电子电荷,转移效率从96%增高到99%。同时,暗电流只与少子寿命密切相关,转移效率对栅间隙长度在1μm以内的变化不敏感。该理论模拟结果有助于BCCD模型参数提取和设计研究。In the light of CCD's physical image and its basic differential equations, an analytical model is developed, which is processed by dispersed and linearized methods.Meanwhile,BCCD device is simulated based on both the model and debugged software. It is shown that ,as the gate length decreases , the gap width between the gates increases and the depth of the channel becomes shorter, the transmitted charge handling capacity will drop from (6.5)×10^(6 ) to 6.1×10^(6 ) electron charge and charge transfer efficiency of the BCCD rise from 96% to 99% roughly. It is also shown that the dark current is merely related with minority carrier lifetime and charge transfer efficiency is insensitive within the gates gap width of 1 μm. The results are helpful to BCCD model parameter extraction and further research .

关 键 词：BCCD 解析模型 模拟仿真 电荷容量 转移效率 

分 类 号：TN386.5[电子电信—物理电子学]