氩离子辐照对ZrO_2-Y_2O_3薄膜的结构影响  

EFFECTS OF THE ARGON ION IRRADIATION ON THE MICROSTRUCTURE OF ZrO_2-Y_2O_3 FILMS

作　　者：黄宁康[1] 冯志蓉[1] 汪德志[1] 

机构地区：[1]四川大学原子核科学技术研究所,成都610064

出　　处：《原子能科学技术》1992年第6期30-35,共6页Atomic Energy Science and Technology

摘　　要：为了研究离子辐照对薄膜结构的影响,对氩离子辐照磁控溅射沉积的ZrO_2-8%(m/m)Y_20_3薄膜,用XRD、AES及XPS进行微观分析。结果表明,溅射沉积的无定形薄膜经离子辐照后发生了晶化,膜内元素与基体元素发生了显著的混合,表面污染的碳向膜内迁移。此外,还研究磁控溅射沉积ZrO_2-8%(m/m)Y_2O_3薄膜氩离子辐照前后表面Zr(3d),Y(3d),O(1s)结合能的位移情况。The microstructure of the films deposited ZrO_2-Y_2O_3 by Ar^+ ion irradiation are investigated with XRD、AES and XPS. The results show that amorphous films deposited with r.f. magnetron sputtering at room temperature are transformed partly to crystalline after argon ion irradiation. The irradiated films are obviously mixed with substrate and contaminating carbon enteres the films deeply. Besides, Zr(3d), Y(3d) and O(1s) on the surface of the deposited films are studied before and after argon ion irradiation.

关 键 词：离子 辐照 氩 薄膜 氧化锆 氧化钇 

分 类 号：O484[理学—固体物理]