陶瓷(玻璃)与金属基复合材料场致扩散连接机理研究  

Joining Mechanism of Field-assisted Bonding of Ceramic (Glass) to SiC(p)/Al Composite

作　　者：窦林萍[1] 孟庆森[1] 薛锦[2] 

机构地区：[1]太原理工大学材料学院,太原030024 [2]西安交通大学焊接研究所,西安710049

出　　处：《材料热处理学报》2004年第1期8-11,共4页Transactions of Materials and Heat Treatment

基　　金：国家自然科学基金项目 (50 3751 0 5) ;山西省自然科学基金项目 (2 0 0 30 1 0 52 ) ;山西省教育厅科技开发项目 (2 0 0 0 - 1 0 1 0 2 2 )

摘　　要：采用自行研制的静电键合机对固体电解质硼硅玻璃和 β“ -氧化铝与铝基复合材料进行了静电场辅助的扩散连接试验。采用TEM、SEM、XRD等手段分析了结合界面微观结构。研究认为 ,结合区为金属 -氧化物过渡区 -陶瓷的结构形式 ,过渡区由表层过渡区和亚表层过渡区构成 ;连接过程主要包括静电键合和固相扩散接合两个阶段 ,界面离子聚集和迁移是产生阳极氧化和形成界面键合的主要机制 ,温度、电压和陶瓷 (玻璃 )的离子导电性是界面氧化物固相扩散接合的基本条件 ;电压、温度、压力及试件表面状态均为连接过程的主要影响因素。Field-assisted diffusion bonding tests are carried out for the joining of borosilicate glass solid electrolyte, (β″-Al2O3, to SiC(p)/Al composite on a bonding machine in the assistance of static electric field. TEM, SEM, XRD and other means are employed to investigate and analyze microstructure of the interface. The results show that the interface consists of metal-oxides transition zone-ceramic, the oxides transition zone is composed of surface transition layer and inner-transition layer. Solid diffusion joining and static electronic bonding make the joining mechanism. The process of ions flowing and accumulation under electric field is the most essential factor for the anodic oxidation and interfacial joining. Proper temperature and voltage are the basic conditions for the solid diffusion bonding of interfacial oxides. Voltage, temperature, pressure and the condition of the surface are the most important factors which govern the bonding process.

关 键 词：固体电解质 陶瓷 金属 铝基复合材料 场致扩散连接 

分 类 号：TG453.9[金属学及工艺—焊接]