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作 者:何捍卫[1] 胡岳华[2] 周科朝[1] 熊翔[1]
机构地区:[1]中南大学粉末冶金国家重点实验室,湖南长沙410083 [2]中南大学资源加工与生物工程学院,湖南长沙410083
出 处:《材料保护》2004年第3期9-11,共3页Materials Protection
基 金:国家杰出青年科学基金资助 ( 5 992 5 412 )
摘 要:用电化学测试技术研究了铜在HAc-KOH -KClO3 化学机械抛光液中的腐蚀与钝化 ,分析了钝化膜的成分 ,研究了成膜的伏安曲线特征 ,考察了化学机械抛光过程中铜腐蚀电位随时间变化的轨迹、钝化膜的磨损与再钝化以及铜的极化曲线。结果表明 ,铜在HAc -KOH -KClO3 化学机械抛光液中钝化膜主要由Cu2 O和CuCl组成 ,CuCl的存在改善了铜的抛光特性。钝化膜的成膜过程符合M櫣ller钝化成膜腜汀B人峒氐拇嬖诓唤黾涌炝嘶Щ蹬坠夤讨械亩刍赡に俾屎湍ニ鸪に俾?,而且降低了抛光磨损的压力和转速 ,大幅提高了抛光中的腐蚀电流密度 。Corrosion and passivation behaviors of copper in HAc-KOH-KClO_3 slurry were studied by the electrochemical measurement technologies.The components of passivating film were analyzed by XPS,and the characteristics of passivating film were indicated with voltampere curves.Changes of potential vs time,polarization curves,abrasion and repassivation of copper during chemical-mechanical polishing were investigated.The results indicate that the passivating film of copper in HAc-KOH-KClO_3 slurry is mainly composed of CuO_2 and CuCl.CuCl improves the polished characteristics of passivating film.The formation of passivating film is according with Müller model.With KClO_3 in polishing solution,the formation and removed rate of passivating film increase,and the polishing pressures and rotation rate decrease during chemical mechanical polishing,furthermore the corrosion current density and the corrosion of copper increase greatly.
分 类 号:TG175[金属学及工艺—金属表面处理]
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