自发辐射因子对VCSEL在大信号调制下的分岔及混沌行为的影响  

Influence of Spontaneous Emission Factor on the Bifurcation and Chaos Behavior of VCSEL under Large Signal Modulation

作　　者：邓果[1] 潘炜[1] 罗斌[1] 

机构地区：[1]西南交通大学计算机与通信工程学院

出　　处：《中国激光》2004年第3期293-296,共4页Chinese Journal of Lasers

基　　金：国家自然科学基金 (No .10 174 0 5 7);宽带光纤传输与通信系统技术国家重点实验室开放课题资助项目

摘　　要：在SIMULINK平台下开发了垂直腔面发射激光器 (VCSEL)的动态仿真模型 ,实施高频大信号调制情形下的动态仿真 ,避免了大信号近似处理 ,提高了计算精度。选择自发辐射因子为控制参量 ,定量分析它对VCSEL稳定性和分岔点的影响。结果表明 ,在所选参量条件下 ,自发辐射因子数值在 5× 10 -3 ～ 5× 10 -5之间时 ,随着调制深度的加深 ,VCSEL峰值光子密度产生分岔 ,呈现双稳、多周期 ,最后回到单周期 ;当小于 10 -5时 ,进入混沌状态的演变过程。同时分岔点的移动依赖于自发辐射因子的大小 ,调控自发辐射因子可以抑制系统的非线性行为。The model of the vertical cavity surface emitting laser (VCSEL) was established by SIMULINK and the influence of the spontaneous emission factor on the high frequency and large signal modulation response is studied. The result shows when its value varied from 5×10 -3 to 5×10 -5, with the modulation index deepening, the peak photon density will exhibit bifurcation and multi-period, then go back to single period. But if it reduces to 10 -5, the peak photon density will exhibit chaos at last. Furthermore, the position of the bifurcation occurs is depend on the value of spontaneous emission factor. A large spontaneous emission factor can suppress the nonlinear behaviors of VCSEL. The simulation results are agree with the experimental results reported in document.

关 键 词：分岔 混沌 大信号调制 自发辐射因子 垂直腔面发射激光器 动态仿真模型 VCSEL 

分 类 号：TN248.4[电子电信—物理电子学]