退火对p型GaP和p型AlGaInP载流子浓度的影响  

THE INFLUENCE OF THERMAL ANNEALING TO THE CARRIER CONCENTRATION OF p-GAP AND p-ALGAINP LAYERS

作　　者：李述体[1] 范广涵[1] 周天明[1] 孙慧卿[1] 王浩[1] 郑树文[1] 郭志友[1] 

机构地区：[1]华南师范大学光电子材料与技术研究所,广东广州510631

出　　处：《华南师范大学学报（自然科学版）》2004年第1期67-70,共4页Journal of South China Normal University(Natural Science Edition)

基　　金：国家科技攻关计划资助项目(00-068);华南师范大学博士启动资金资助项目(660119)

摘　　要：采用LP-MOCVD技术在n-GaAs衬底上生长了AlGaInP/GaInP多量子阱红光LED外延片.相关研究表明退火对p型GaP和p型AlGaInP载流子浓度有重要影响.与未退火样品相比,460℃退火15min,外延片p型GaP层的空穴浓度由5 6×1018cm-3增大到6 5×1018cm-3,p型AlGaInP层的空穴浓度由6 0×1017cm-3增大到1 1×1018cm-3.这可能是由于退火破坏了Mg-H复合体,恢复了Mg受主的活性导致的.The AlGaInP/GaInP multiple quantum wells red LED wafers were grown by EMCORE GS/3200 LP-MOCVD. The influences of thermal annealing to the characteristics of p-GaP and p-AlGaInP layer were studied. Compared with the grown sample, the hole carrier concentration of GaP layer in LED wafer increased from 5.6×10^(18) cm^(-3) to 6.5×10^(18) cm^(-3), and the hole carrier concentration of AlGaInP layer increased from 6.0×10^(17) cm^(-3) to 1.1×10^(18) cm^(-3), when wafer was annealed under 460 ℃ for 15 minutes.

关 键 词：半导体 光致发光 砷化镓 载流子浓度 退火 

分 类 号：TN304.23[电子电信—物理电子学]