射频反应溅射纳米SnO_2薄膜气敏特性研究  

Study on gas sensing character of nanosized SnO_2 thin film fabricated by magnetron reactive sputtering

作　　者：宋建将[1] 黄世震[1] 林伟[1] 陈伟[1] 黄兆新[1] 陈知前[1] 

机构地区：[1]福州大学气敏传感器研究所,福建福州350002

出　　处：《漳州师范学院学报（自然科学版）》2004年第1期37-42,共6页Journal of ZhangZhou Teachers College（Natural Science)

摘　　要：采用射频反应溅射在瓷管上制备了SnO2气敏薄膜元件,以及用传统方法制备了SnO2厚膜元件.两种元件经测试表现出对乙醇较高的灵敏度,对两种元件进行了性能对比测试.测试表明,无论在灵敏度、响应恢复时间,还是在检测浓度范围上,SnO2气敏薄膜元件都比传统的厚膜元件性能优越.SnO2气敏薄膜元件经过表面修饰,在200×10-6体积浓度下接近30.对薄膜元件加热温度及选择性进行了研究,初步探讨了元件稳定性及其敏感机理.SnO2 thin film gas sensing element was fabricated on Al2O3 ceramic tube by magnetron reactive sputtering, and SnO2 thick film gas sensing element was fabricated by traditional method respectively. The two elements were sensitive to ethanol, and post-experimental tests showed that thin film element was prior to the thick one in characters of sensitivity, response-recovery and sensing range. The sensitivity to ethanol of the thin film sensor was improved through surface modification, approximately 30 under volume concentration of 20010-6. The influence of operating temperature on selectivity of the elements was analyzed. The stability and the sensing mechanism of the elements were prelimimarily discussed.

关 键 词：射频反应溅射 二氧化锡薄膜 厚膜元件 气敏特性 纳米材料 

分 类 号：TN304.21[电子电信—物理电子学] TN305.92