高补偿硅的阻-温特性  

Highly Compensated Si: Resistivity-temperature Characteristic

作　　者：张建[1] 巴维真[1] 陈朝阳[1] 丛秀云[1] 陶明德[1] M.K.巴哈迪尔哈诺夫 

机构地区：[1]中国科学院新疆理化技术研究所,新疆乌鲁木齐830011 [2]塔什干国立技术大学,乌孜别克斯坦共和国塔什干700095

出　　处：《电子元件与材料》2004年第4期19-21,共3页Electronic Components And Materials

基　　金：国家外专局科研基金资助项目(20036500065);中国科学院西部之光人才培养项目

摘　　要：采用5·cm的p型单晶硅,通过在高温下扩散金属锰的方法,可以得到高补偿硅。笔者选择没有光照下,室温电阻率为5.84×104·cm的样品,进行测量电阻随温度的变化关系(温度从77 K上升到300 K)。测试结果表明:在没有光照条件下测试时,电阻随温度的变化同普通的半导体;但在受到光照时,却出现极不相同的情况,这种不同,可能来自所掺杂的硅是一种光敏材料及掺入的杂质是一种深能级杂质。Highly compensated Si was acquired by diffiusing Mn-metal into p-type silicon crystal of 5·cm at high temperature. The relation between resistivity and temperature (temperature increases from 77 K to 300 K) was investigated with samples of 5.84×104·cm, at room temperature. The results show that when the samples are in darkness, it behaves as common semiconductors; when the samples exposed to light, it behaves quite differently. That may caused by the fact that the material is sensitive to light and doped impurity of Mn lies on deep level.

关 键 词：高补偿硅 光敏 深能级 

分 类 号：TN304.12[电子电信—物理电子学]