利用高沸物二硅烷中的甲基氯二硅烷制备无氯Si-C-N陶瓷  

THE PREPARATION OF CHLORINE-FREE Si-C-N CERAMIC WITH METHYLCHLORODISILANES FROM HIGH-BOILING DISILANE RESIDUE

作　　者：孟凡君[1] 谭业邦[1] 刘宗林[1] 茹淼焱[1] 刘爱祥[1] 孟霞[1] 

机构地区：[1]山东大学化学与化工学院,山东济南250100

出　　处：《高分子材料科学与工程》2004年第1期187-190,共4页Polymer Materials Science & Engineering

摘　　要：直接法生产甲基氯硅烷的高沸点副产物分离出的甲基氯二硅烷(DS)与八甲基环四硅氮烷反应形成氯硅烷低聚物,经氨解成为聚硅氮烷(PSZ)前躯体,并发现PSZ甲苯溶液为假塑性流体,得到70%(质量)的PSZ甲苯溶液的粘流活化能为18.3kJ/mol。PSZ在1100℃高温裂解后,可得到无氯Si-C-N无定型陶瓷,认为该路线是制备高性能Si-C-N陶瓷的最经济的方法之一。When methylchlorodisilanes(DS) were separated from high-boiling disilane residue, a by product of direct synthesis of methylchlorodisilanes, and reacted with octamethylcyclotetrasilazane(D~~N_4), a chlorosilazane oligomer was formed. After ammonolysis of the chlorosilazane, a polysilozane(PSZ) precursor was obtained. It has been discovered that the PSZ solutions in toluene are pseudo-plastic fluid and that the viscosity-flow activation energy for 70% PSZ solution in toluene is (18.3) kJ/mol. Pyrolysis of PSZ at 1100 ℃ in a nitrogen atmosphere yields an amorphous Si-C-N ceramic with negligible amount of chlolrine. Therefore. this process will be one of the most economical ways to produce high performance Si-C-N ceramic.

关 键 词：Si-C-N陶瓷 高沸物二硅烷 甲基氯二硅烷 聚硅氮烷 流变特性 高温裂解 

分 类 号：TQ174.758[化学工程—陶瓷工业]