化学腐蚀法研究蓝宝石单晶中的位错缺陷  

Study on the dislocation of the sapphire crystal with chemical etching

作　　者：吕海涛[1] 张维连[1] 左燕[1] 步云英 

机构地区：[1]河北工业大学,天津300130 [2]天津半导体技术研究所,天津300051

出　　处：《半导体技术》2004年第4期48-51,共4页Semiconductor Technology

摘　　要：采用化学腐蚀-金相显微镜法和SEM法观察了CZ法生长的直径50mm的蓝宝石单晶中的位错缺陷.发现位错分布状况为中心较低、边缘较高,密度大约为104～10 5cm-2.在不同温度不同的试剂以及不同的腐蚀时间进行对比结果发现,用KOH腐蚀剂在290℃下腐蚀15min时,显示的位错最为清晰、准确,效果最佳.Dislocation in CZ Φ50mm sapphire crystal had been observed by chemical etching-metallograph and SEM methods. From the results we found dislocation density was low on the center,while it was high at the edge of the sample. On the whole, dislocation density was about 104~105cm-2.Inaddition, compared the results which were obtained when the enchants and temperature and timevaried. We learn the dislocation was displayed very clearly and accurately when we etch with KOH at290℃ for fifteen minutes. Which was the best condition.

关 键 词：化学腐蚀 蓝宝石单晶 位错缺陷 KOH腐蚀剂 金相显微镜 

分 类 号：TN304.21[电子电信—物理电子学] O772[理学—晶体学]