离子束增强沉积VO_2多晶薄膜的成膜机理  

Formation Mechanism of VO_2 Film Formed by Ion Beam Enhanced Deposition

作　　者：李金华[1] 袁宁一[1] 

机构地区：[1]江苏工业学院信息科学系功能材料实验室,常州213016

出　　处：《微细加工技术》2004年第1期47-51,61,共6页Microfabrication Technology

基　　金：国家自然科学基金资助项目(10175027;60277019)

摘　　要：用离子束增强沉积制备高性能VO2薄膜,在溅射V2O5粉末靶的同时,用氩、氢混合束对沉积膜作高剂量离子注入,然后经500℃以上的退火,获得热电阻温度系数(TCR)高达4%的VO2薄膜。成膜机理是:利用高剂量氩离子注入的损伤效应使V2O5的V-O键断裂;利用注入氢的还原效应将V2O5转换成VO2薄膜;利用混合效应使界面结合牢固、薄膜结构均匀;利用掺杂效应,使氩出现在晶格的间隙位置,产生张应力,降低了薄膜的转换温度;利用轰击效应使薄膜致密,降低了氧空位,减小了晶界宽度,提高了其TCR。A new method, Ion Beam Enhanced Deposition (IBED),was designed to prepare VO_2 film with high performance.During sputtering the target of V_2O_5 a high current of hydrogen and argon ions mixing beam was implanted into the deposited filmwith high (dose.)After annealing VO_2 film with TCR ((temperature) coefficient of resistance) as high as 4% was obtained.The formation mechanism of IBED VO_2 film was discussed.The part of V-O valence bond was broken due to the damaging effect of high dose argon and V_2O_5 structure was changed to VO_2 when the free oxygen combined with implanted hydrogen.The mixing effect of high dose argon could result in the excellent adhere to the substrate. Furthermore,the implantation of argon ions of high dose would also introduce stress in the film, which decreased the transition temperature of the IBED VO_2 film and enlarged the slope of resistance-temperature curve.The bombardment effect of argon implantation makes the VO_2 film dense, decreases the density of the oxygen vacancy and crystal boundary width,consequently increases the TCR.

关 键 词：二氧化钒薄膜 离子束增强沉积 成膜机理 VO2 多晶薄膜 

分 类 号：TN304.21[电子电信—物理电子学]