薄片PIN探测器及其阵列的灵敏度和上升时间测定  

Measurement of a Thin-layer PIN Detector and Its Array Sensitivity and Risetime for g-ray

作　　者：施志贵[1] 武蕊[1] 张莉[1] 

机构地区：[1]中国工程物理研究院电子工程研究所,四川绵阳621900

出　　处：《信息与电子工程》2004年第1期70-72,共3页information and electronic engineering

基　　金：国防科技预先研究基金项目(413110602)

摘　　要：利用CΓC67实验装置测量了薄片PIN探测器及其二元和三元阵列的低能g射线灵敏度和上升时间。实验证实,三元阵列灵敏度比单个探测器提高到近3倍,但上升时间也随之增大到近2倍。The measurement of a thin-layer PIN detector and its array sensitivity and risetime for g-ray by CΓC67 system has been described in detail. According to the measurement,the sensitivity of an array comprising three detectors will be tripled in comparison with the single detector,but its risetime will be doubled.

关 键 词：薄片PIN探测器 灵敏度 三元阵列 上升时间 CΓC67 

分 类 号：TN304[电子电信—物理电子学]