用于太阳电池吸收层CuInS_2薄膜的RF反应溅射制备及其表征  

PREPARATION AND CHARACTERIZATION OF THE CuInS_2 THIN FILES DEPOSITED BY RF REACTIVE SPUTTER FOR SOLAR CELL ABSORBER

作　　者：邵乐喜[1] 张昆辉[2] 黄惠良[2] 

机构地区：[1]湛江师范学院信息科技学院,湛江524048 [2]台湾清华大学电子工程研究所

出　　处：《太阳能学报》2004年第1期123-126,共4页Acta Energiae Solaris Sinica

摘　　要：该文报道采用射频反应溅射技术,以铜银合金为靶材、H2S为反应气体,在Soda-Lime玻璃衬底上沉积高质量CuInS2薄膜的实验结果。分别运用扫描电镜、能量散射X-射线谱、X-射线衍射谱和表面轮廓仪等对沉积样品的结构形貌和组成成分等特性进行了分析表征,研究了这些特性对沉积参数的依赖关系。通过对溅射功率、衬底温度和H2S流量等工艺参数的优化,获得了单一黄铜矿相结构且沿单一晶向(112)生长的高质量富铜薄膜,晶粒线度达400 nm,薄膜中成分的原子比[Cu+In]/[S]和[Cu]/[Cu+In]可分别接近于1和0.5,并对结果进行了简单讨论。该技术成本低廉、可靠性高,适合于高效太阳电池吸收层薄膜的高均匀度大面积沉积,具有规模化工业生产的推广价值。The ternary compound semiconductor CuInS2 become a promising absorber material for the high conversion efficiency thin film solar cells, which has wide direct energy bandgap of about 1.55 eV well matching the solar spectrum and the high resistance to radiation. The preparation and characterization of the high quality CuInS2 films for solar cell absorber with high conversion efficiency were reported. The films were deposited by a RF reactive sputter technique, in which Cu-In alloy was used as the target, H2S as the reactive gas and Soda lime glass as the substrate. The as-deposited films was single chalcopyrite phase with single crystalline orientation along (112) as shown in X-ray diffraction (XRD) measurements. The grain size of about 400nm and the constituent ratio [Cu+ In]/[S] and[Cu]/[Cu+ In] of about 1 and 0.5,was obtained by optimizing the process parameters as revealed in the energy diffraction X - ray analysis (EDX), scanning electron microscopy (SEM) and α-step measurements.

关 键 词：CulnS2薄膜 射频(RF)反应溅射 太阳电池 

分 类 号：TM615[电气工程—电力系统及自动化]