氧气放电辅助激光淀积原位制备高T_c超导薄膜  

In situ preparation of high To superconductive films using plasma assisted laser ablation

作　　者：范永昌[1] 安承武[1] 满家海 陆冬生[1] 李再光[1] 

机构地区：[1]华中理工大学激光技术国家实验室,武汉430074

出　　处：《中国激光》1992年第10期774-776,共3页Chinese Journal of Lasers

基　　金：高等学校博士学科点专项科研基金资助

摘　　要：采用低压氧气放电辅助的激光淀积方法,原位外延生长出零电阻温度91K,临界电流密度10~5A/cm^2的Y-Ba-Cu-O高温超导薄膜。扫描电镜和X光衍射分析结果表明,薄膜中超导相晶粒的生长具有c轴垂直于表面的择优取向。High To superconducting Y-Ba-Cu-O film with zero-resistance temperature of 91 K and critical current density of about 105 A/cm2 at 77 K have bsen reproducibly fabricated in situ by plasma-assisted laser ablation method. The SBM micrographs and X-ray diffraction pitterns show that these films are of excellent eptiaxial quality and are oriented mostly with its c-axis perpendicular to the substrate furface.

关 键 词：激光淀积 超导薄膜 制备 外延生长 

分 类 号：TM26[一般工业技术—材料科学与工程]