UHV/CVD生长锗硅材料的偏析现象  

Ge Segregation in Si_( 1-x)Ge_x Alloy Grown on Si by UHV/CVD

作　　者：吴贵斌[1] 崔继锋[1] 黄靖云[1] 叶志镇[1] 

机构地区：[1]浙江大学硅材料国家重点实验室,浙江杭州310027

出　　处：《材料科学与工程学报》2004年第2期161-163,共3页Journal of Materials Science and Engineering

摘　　要：本文对利用超高真空CVD方法生长的Si1 -xGex 合金外延层中的锗表面分布情况和Ge在界面偏析现象进行了深入的研究。通过XPS和SIMS图谱的研究 ,指出表面由于锗的偏析 ,造成锗在体内和表面的含量不同 ,在低温时生长锗硅合金 ,表面氢原子的吸附可有效地抑制锗的偏析 ,但随着温度的升高 。SiGe epilayers were grown on Si substrate by UHV/CVD.We have investigated Ge segregation at the interface and surface by SIMS and XPS.The SIMS and XPS results revealed that Ge segregation is responsible for the Ge concentration difference between surface and inside.And in the growth chamber H adlayer at the surface prevents segregation of Ge at low temperatures,and as the temperature increases the hydrogen desorbs leaving a partly uncovered Si/Ge surface which condition is favourable for segregation,islanding and oxygen attack.

关 键 词：超高真空化学气相沉积法 锗硅合金 偏析现象 二次离子质谱仪 X射线光电子谱 

分 类 号：TN304.055[电子电信—物理电子学]