选择离子注入集电极技术研究  

Research of Selectively Implanted Collector Technology

作　　者：金海岩[1] 张利春[2] 高玉芝[2] 

机构地区：[1]北京大学 [2]北京大学微电子学研究所,北京100871

出　　处：《固体电子学研究与进展》2004年第1期130-133,共4页Research & Progress of SSE

摘　　要：为提高超高速双极晶体管的电流增益 ,降低大电流下基区扩展效应对器件的影响 ,将选择离子注入集电区技术 (SIC)应用于双层多晶硅发射极晶体管中。扩展电阻的测试结果显示出注入的 P离子基本上集中在集电区的位置 ,对发射区和基区未造成显著影响。电学特性测量结果表明 ,经过离子注入的多晶硅发射极晶体管的电流增益和最大电流增益对应的集电极电流明显高于未经离子注入的晶体管。因此 ,在双层多晶硅晶体管中采用 SIC技术 ,有效地降低了基区的扩展效应 ,提高了器件的电学特性。In order to imporve the current gain of very high-speed bipolar transistor and decrease the influence of Kirk effect at high emitter injection, we incorporate selectively implanted collector (SIC) in a double polysilicon self-aligned transistor. Measurement results of impurity concentration show that implanted P element distributes mainly in collector region and has no obvious influence to the impurity distribution in emitter and base. Electrical test indicates that the current gain and collector current of implanted transistor is larger than that without implantation. So SIC method can effectively decrease Kirk effect and improve electrical characteristic of transistors.

关 键 词：基区扩展效应 选择离子注入集电区 双层多晶硅发射极晶体管 电流增益 

分 类 号：TN322.8[电子电信—物理电子学]