Si衬底(Pb_(1-x)Sr_x)TiO_3系铁电薄膜的制备与性能研究  

Preparation and Characteristics of Si-based (Pb_(1-x)Sr_x)TiO_3 Ferroelectric Thin Films

作　　者：王茂祥[1] 陈淑燕[2] 孙平[1] 

机构地区：[1]东南大学电子工程系,南京210096 [2]南京师范大学江苏省光电重点实验室,南京210097

出　　处：《固体电子学研究与进展》2004年第1期138-141,共4页Research & Progress of SSE

基　　金：国家自然科学基金 (696710 0 8);教育部光电技术及系统重点实验室资助课题 (CETD0 0 -0 9)

摘　　要：性能优良的 Si衬底铁电薄膜的制备对制作 Si基单片集成非制冷焦平面阵列 (UFPA)器件意义重大。文中采用磁控测射技术在 Si衬底上成功地制备了 (Pb1 - x Srx) Ti O3系铁电薄膜 ,该薄膜以 LSCO/ITO复合薄膜作底电极 ,Au薄膜作顶电极 ,其制备工艺可与 Si微电子技术兼容。测试结果表明 ,其微观结构致密 ,绝缘性较好 ,电阻率可高达 1 0 1 1 Ω· cm量级 ,介电常数与热释电系数分别可达 1 0 2 及 1 0 - 2 μC/cm2 K量级。Preparation of Si-based ferroelectric thin films with excellent properties is important to the fabrication of Si-based single chip UFPA device. Si-based (Pb 1- x Sr x )TiO 3(PST) ferroelectric thin films were prepared successfully by magnetron sputtering in this paper. The PST thin films were compatible with the Si microelectronics in the preparation process. The LSCO/ITO and the Au films were used as the base electrode and the top electrode of the PST thin films, respectively. The microstructure of the PST thin films was compact and the resistance ratio of the PST thin films was 10 11 Ω·cm order. Its dielectric constant and pyroelectric coefficient were 10 2 and 10 -2 μC/cm 2K order, respectively.

关 键 词：硅衬底 铁电薄膜 (Pb1—xSrx)TiO3 磁控测射 

分 类 号：TN304.9[电子电信—物理电子学]