神经元MOS的特性分析  

The Characteristics Analysis of Neuron MOS

作　　者：杨媛[1] 高勇[1] 余宁梅[1] 

机构地区：[1]西安理工大学自动化与信息工程学院,陕西西安710048

出　　处：《西安理工大学学报》2004年第1期49-53,共5页Journal of Xi'an University of Technology

摘　　要：在神经元MOS的基本结构和工作原理的基础上,使用器件的等效电路模型通过HSPICE仿真软件对器件进行模拟,给出了器件的转移特性曲线,得到了器件的"可变阈值"特性,并介绍了该器件在CDMA匹配滤波器及数字PWM发生器中的应用。结果表明,该器件可使电路结构大为简化,器件数目大大减少。最后通过对器件运算精度的分析,得出其运算精度主要受MOS晶体管寄生电容等因素的影响。Based on the basic structure and the principle of neuron MOS, the device is simulated with HSPICE using the equivalent circuit model and the 'variable threshold' characteristics of the device is obtained. The application research of the device is introduced—the applications in CDMA matched filter and digital PWM generator, the research result shows that the circuit can be simplified much through using neuron MOS. Finally, the operation precision of the device is analyzed, the conclusion that the parasitical capacitor of the MOS transistor is the main factor to affect the precision is obtained.

关 键 词：神经元MOS SPICE模型 浮栅 

分 类 号：TN432[电子电信—微电子学与固体电子学]