半导体脉冲功率开关RSD的开通电压特性研究  

A Study on Turning-on Voltage Characteristics of RSD's

作　　者：杜如峰[1] 余岳辉[1] 彭昭廉[1] 李焕炀[1] 胡乾[1] 

机构地区：[1]华中科技大学电子科学与技术系,湖北武汉430074

出　　处：《微电子学》2004年第2期195-197,202,共4页Microelectronics

基　　金：国家自然科学基金资助项目(50277016)

摘　　要：　RSD(ReverselySwitchedDynistor)是一种晶闸管与晶体管相间排列的多元胞结构高速大功率半导体开关器件,该器件采用控制等离子体层触发的开通模式。文章从理论上推导出其最大开通电压,并研究了该电压与器件结构参数之间的关系,给出了降低器件功耗的方法。RSD is a multi-cell high-speed power semiconductor switch consisting of thousands of alternating thyristors and transistor sections and triggered by an electron-hole plasma layer. The maximum turning-on voltage of the device is theoretically derived, and relations of the voltage with the structural parameters of the device are discussed. And finally, a method is proposed to reduce its power dissipation.

关 键 词：半导体脉冲功率开关 RSD 开通电压 等离子体层触发 晶闸管 晶体管 

分 类 号：TN303[电子电信—物理电子学]