用多光束干涉实现纳米级阵列图形的长焦深光刻  

Long focal depth photolithography for obtaining nanometer array patterns with multi-beam interference

作　　者：张锦[1,2] 冯伯儒[1] 郭永康[3] 

机构地区：[1]中国科学院光电技术研究所微细加工光学技术国家重点实验室 [2]四川大学物理系,四川成都610064 [3]四川大学物理系

出　　处：《光电工程》2004年第3期8-11,共4页Opto-Electronic Engineering

基　　金：国家自然科学基金资助项目(60276043)

摘　　要：用多束相干光适当组合干涉曝光,得到的图形与基片在干涉场内的纵向位置z无关,与x、y位置呈周期关系,光的相干长度对应传统光学光刻的焦深。该方法适合大尺寸基片上纳米级孔、锥阵列图形的制作。模拟了双光束双曝光、三光束单曝光和四光束单曝光的干涉场光强分布,用波长为441.6nm的激光曝光得到尺寸为200nm的孔阵和点阵的图形。Through combination of multi-beam coherent light for interference exposure with, the obtained patterns are independent of the longitudinal position z of substrate, and they appear a periodic relation with position x and position y in the interference field. The method is suitable for fabricating nanometer holes and cone array patterns on large-sized substrate. The light intensity distributions of dual-exposure with two beam interference, single exposure with tri-beam interference and single exposure with four-beam interference are simulated. The hole-arrays and point arrays with a size of 200 nm are obtained through exposure with a light source 441.6 nm wavelength.

关 键 词：干涉光刻 多光束干涉 焦深 阵列图形 

分 类 号：TN305.7[电子电信—物理电子学]