高阻硅掩膜选择性生长多孔硅阵列  

Formation of porous silicon array by using highly resistive silicon as masking material

作　　者：陈少强[1] 朱建中[1] 朱自强[1] 邵丽[1] 王伟明[1] 郁可[1] 

机构地区：[1]华东师范大学电子系,上海200062

出　　处：《科技通讯（上海）》2004年第1期63-66,共4页

基　　金：国家杰出青年基金(69925409);国家自然科学基金(60276036);上海应用材料基金与发展基金(0202)

摘　　要：介绍一种在低阻P型硅衬底上用氢离子注入技术形成局部高阻硅掩膜,用电化学腐蚀选择性生长多孔硅微阵列的工艺流程。结果证明,用高阻硅掩膜选择性生长多孔硅具有很好的掩蔽效果,生成的多孔硅阵列的有序性和完整性良好。This paper introduces a new technology which hydrogen ion implantation is used to form a highly resistive silicon layer.And the highly resistive silicon layer c an be used as a mask to produce PS array by selective electrochemic al etching process.The results of te st on the PS array show that the highly resistive silicon mask keeps its integrity very well during th e anodic oxidation process and can produce PS array with good integrity and distribution.

关 键 词：多孔硅阵列 选择性生长 高阻硅掩膜 氢离子注入 电化学腐蚀 

分 类 号：TN304.12[电子电信—物理电子学]