掺Sb纳米ZnO的光致发光的研究  

Study on Photoluminescence of Sb-doped ZnO Nanocrystallites

作　　者：杜广芬[1] 左健[1] 李福利[2] 张运生[1] 耿玉珍[2] 

机构地区：[1]中国科学技术大学结构分析重点实验室,安徽合肥230026 [2]首都师范大学物理系,北京100037

出　　处：《光散射学报》2004年第1期63-65,共3页The Journal of Light Scattering

基　　金：国家自然科学基金资助课题(批准号:10174048)

摘　　要：用柠檬酸盐法合成了不同掺杂浓度的纳米ZnO,粒径约为15nm。探讨了Sb掺杂对ZnO光致发光峰的影响。随着掺杂量的提高,样品的发射峰从428nm移至444nm。未掺杂ZnO的发光主要是源于电子从锌填隙形成的缺陷能级到价带顶的跃迁;随着掺杂量的提高,体系的氧空位增加,从而使得电子从氧空位所形成的缺陷能级到价带顶的跃迁占据主导,光致发射峰向长波方向移动。Sb-doped ZnO nanocrystallites of average grain size about 15nm were made by the citrate method and made some discussion about the effect of the Sb-doped on the photoluminescence peak of ZnO nanocrystallites. With increasing of doping, the photoluminescence peak of products drift from 428nm to 444nm. Electron transition from defect energy level formed by interval Zn ions to tip of value band contributes to undoped photoluminance. The red shifts of photoluminance originated from the increasing of oxygen vacancies.

关 键 词：柠檬酸盐法 光致发光 氧化锌薄膜 纳米材料 锑掺杂 缺陷能级 

分 类 号：O482.31[理学—固体物理] TB383[理学—物理]