应用原子层外延技术分析Turbo-Disk MOCVD外延生长模式  

Analysis of MOCVD Epitaxy Growth Model by ALE

作　　者：王浩[1] 廖常俊[1] 范广涵[1] 刘颂豪[1] 郑树文[1] 李述体[1] 郭志友[1] 孙慧卿[1] 陈贵楚[1] 陈炼辉[1] 

机构地区：[1]华南师范大学信息光电子学院,广东广州510631

出　　处：《液晶与显示》2004年第2期128-133,共6页Chinese Journal of Liquid Crystals and Displays

基　　金：国家科技攻关计划资助项目 (No.0 0 0 68) ;国家"973"资助项目 ( 0 0 1CB3 0 93 0 2 ) ;广东省重大科技专项资助项目 (No .2 0 0 3A10 3 0 40 5 )

摘　　要：应用原子层外延与分子层外延的理论研究了Turbo DiskMOCVD外延生长过程 ,发现生长主要发生在衬底表面的台阶处 ,当通过控制生长参数达到优质外延时 ,实际上是一种亚原子外延过程 。The atomic layer epitaxy theory and molecule layer epitaxy theory were applied to research the Turbo-Disk MOCVD epitaxy process. It was found the growth mainly happened at the sidestep of the surface. When the epitaxy was optimized through the control of growth parameter, the sub- atomic layer epitaxy was realized. And perfect epitaxy layer was obtained through the analysis and control of the system.

关 键 词：原子层外延法 分子层外延法 金属有机化学气相淀积 参数调整 外延设备 ALE反应装置 

分 类 号：O649.4[理学—物理化学]