硅-硅直接键合制造静电感应器件  

Static Induction Device manufactured by Silicon Direct Bonding

作　　者：陈新安[1] 刘肃[1] 黄庆安[2] 

机构地区：[1]兰州大学,甘肃兰州730000 [2]东南大学,江苏南京210096

出　　处：《电力电子技术》2004年第2期92-94,共3页Power Electronics

摘　　要：静电感应器件(StaticInductionDevice,SID)栅源击穿电压VGK不高一直是该类器件研制中存在的一个问题。用SI/SI键合技术代替高阻厚外延工艺,制造出一种不同于外延掩埋栅结构的掩埋栅结构——键合掩埋栅结构,从制造工艺和器件结构上提高了VGK。通过SITH器件的研制,证明了键合掩埋栅结构能够提高VGK和整个器件的电学性能。It is always a bottleneck to improve the gate-source breakdown voltage(VGK) of Static Induction Device (SID),which is not high enough during the devices manufacture.Using the silicon direct bonding process to replace the high resistivity epitaxy process, a bonding buried gate structure differ from epitaxial structure is formed.The gatesource break-down voltage (VGK) can be improved through the manufacture process and the structure.It is proved that the bonding buried gate is a promising structure and can improve the VGK and other performances of the Static Induction Thyristor (SITH) .

关 键 词：电力半导体器件/静电感应器件 硅-硅直接键合 掩埋栅结构 

分 类 号：TN313.87[电子电信—物理电子学]