连续CVD Nb_3Sn层生长的规律及特征的研究  

THE REGULARITIES OF GROWTH OF THE CONTINUOUS CHEMICAL VAPOR DEPOSIT (CVD) Nb_3Sn LAYER

作　　者：陈国堂[1] 吴裕生[1] 齐志伟[1] 

机构地区：[1]长沙矿冶研究院

出　　处：《矿冶工程》1989年第3期51-55,共5页Mining and Metallurgical Engineering

摘　　要：本文讨论了连续CVD Nb_3Sn层沉积速率与生产速率或带速之间的关系。研究了一定工艺条件下连续CVD层厚与沉积时间的线性生长关系和过渡层厚形成的抛物线规律与Nb_3Sn层生长的特征。In this paper the relationship will be discussed between the deposition rate and tape rate during the continuou CVD of Nb_3Sn. A analysis will be made on the linear relationship of thickness of the continuous CVD Nb_3Sn layer to deposit time, the parabolic relationship of transitional layer thickness to deposition time, and the growth characteristics under a given deposition condition.

关 键 词：超导体 NB3SN 化学气相沉积 

分 类 号：TM263[一般工业技术—材料科学与工程]