金属氧化物半导体酒敏材料研究现状  被引量:2

A Review of Metal Oxide Semiconductor as Ethanol-sensing Material

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作  者:常剑[1] 詹自力[1] 蒋登高[1] 

机构地区:[1]郑州大学化工学院,河南郑州450002

出  处:《电子元件与材料》2004年第5期25-28,共4页Electronic Components And Materials

摘  要:概述了SnO_2、ZnO、Fe_2O_3和复合金属氧化物酒敏材料的研究现状,阐述了掺杂、材料粒径纳米化对酒敏性能的影响。介绍了In_2O_3酒敏材料的新进展:采用微乳液的方法制备出粗径8 nm的In_2O_3纳米材料,掺入少量的Pt、La_2O_3制得功耗低(<150 mW)、灵敏度高、选择性和稳定性好的乙醇气体传感器,响应时间7 s,恢复时间30 s;并对酒敏机理进行了浅析。The research on ethanol-sensing materials, such as SnO_2, ZnO, Fe_2O_3 and composite metal oxide was summarized. The effects of dopant and nanosization of partical size were discussed. The newest developed 8 nm In_2O_3-based ethanol-sensing material was prepared by microemulsion method and doped with small amount of Pt and La_2O_3. The ethanol sensors made from above-mentioned material have low power consumption (<150 mW), high sensitivity, selectivity, and long term stability. The response time was 7s and recovery time 30s. The ethanol-sensing mechanism was also analyzed.

关 键 词:酒敏材料 金属氧化物半导体 气敏性能 

分 类 号:TP212[自动化与计算机技术—检测技术与自动化装置] TN304[自动化与计算机技术—控制科学与工程]

 

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