HgCdTe红外焦平面用1×288 CCD读出电路  

1×288 CCD Readout Circuit for HgCdTe IR FPA

作　　者：龙飞[1] 张顾万[1] 顾正伟[1] 李仁豪[1] 

机构地区：[1]重庆光电技术研究所,重庆400060

出　　处：《半导体光电》2004年第2期91-93,共3页Semiconductor Optoelectronics

摘　　要：设计和研制了一种采用多晶硅交叠栅结构的1×288红外信号处理器读出电路。制作中采用了多重吸杂技术和大剂量离子注入技术,提高了电路的信号处理能力,降低了信号噪声。该电路具有分割、抗晕、背景撇出功能。其功耗小于等于50mW,动态范围大于等于60dB,转移效率大于等于99.99％。详细介绍了这种1×288红外读出电路的理论设计和研制方法,给出了工艺流程及器件的测试方法。The 1×288 CCD IR signal readout circuit with poly-silicon overlap gate structure is designed and developed. High implanting dose and multiple impurity absorption technologies are used to enhance the signal handling capability and to reduce signal noise. The 1×88 CCD IR readout circuit is characterized by such functions as the put aside the background signal, dividing the signal, anti-blooming. Its performance of transfer efficiency is more than 99. 99%, dynamic range is more than 60 dB and power dissipation is not greater than 50 mW. The design and processes of developing the 1×288 CCD IR readout circuit are presented in details, as well as the processes of fabrication and the testing methods of the device.

关 键 词：电荷耦合器件 转移效率 红外读出电路 

分 类 号：TN386.5[电子电信—物理电子学]