用GaAsMMIC实现2.1GHz的预失真线性化单片  

A 2.1GHz Pre-Distortion Linearity GaAs MMIC

作　　者：许晓丽[1] 张斌[1] 邵凯[1] 

机构地区：[1]南京电子器件研究所,南京210016

出　　处：《Journal of Semiconductors》2004年第3期321-324,共4页半导体学报（英文版）

摘　　要：介绍了一种预失真线性化单片电路 ,该电路单电源工作 ,采用预失真技术结合有源反馈的方法 ,完成了单片预失真线性化电路的研制 .预失真线性化单片电路采用 75 m m Ga As MMIC工艺研制 ,芯片面积约为 4 mm2 .结果表明 ,2 .1GHz时此预失真单片电路可改善放大器的三阶互调分量 9dA pre-distortion-based high linearity monolithic is proposed.Test is processed between the main amplifier alone and with the pre-distortion IC together.Two-tone test with signals 5MHz frequency offset results in the reduction of 9dB of IMR3 at the center frequency of 2.1GHz.Also achieved is the reduction of 9dB of ACPR when it is tested in WCDMA mode. As authors know,it is the first time that the pre-distortion IC is proposed within China.

关 键 词：微波单片集成电路 预失真 线性化 三阶互调功率比 邻信道泄漏功率比 

分 类 号：TN43[电子电信—微电子学与固体电子学]