真空蒸发法择优定向生长ZnO薄膜  

Preferred Orientation Growth of ZnO Films by Vacuum Evaporation

作　　者：马勇[1] 王万录[1] 廖克俊[1] 吕建伟[1] 孙晓楠[1] 

机构地区：[1]重庆大学应用物理系

出　　处：《光电子技术》2004年第1期1-3,共3页Optoelectronic Technology

基　　金：国家 8 63计划资助项目 ( No.2 0 0 1 AA5 1 3 0 1 1 ) ;重庆市教委科学技术基金项目 ( No.0 2 0 80 4)

摘　　要：研究了 ( 0 0 2 )向择优生长 Zn O薄膜。利用真空蒸发法制备 Zn O薄膜 ,衬底材料是镜面抛光石英片。实验结果表明 ,用此方法可获得高度择优定向生长的 Zn O薄膜 ,氧化退火温度对Zn O薄膜的结构有重要影响。ZnO films with(002) preferred orientation growth were investigated. The ZnO films were synthesized by vacuum evaporation on mirror-polished quartz substrates. Experimental results showed that highly preferred growth of ZnO films has been achieved by the confirmation of X-ray diffraction. It was also found that post-annealing treatment has an important effect on ZnO films structure.

关 键 词：真空蒸发 择优定向生长 ZNO薄膜 热处理 

分 类 号：TN304.055[电子电信—物理电子学]