128元非致冷氧化钒红外探测器的制作  

FABRICATION OF 128-ELEMENT UNCOOLED VO_x THERMAL IR DETECTORS

作　　者：王宏臣 易新建[1] 陈四海[2] 黄光[2] 肖静 

机构地区：[1]华中科技大学激光国家重点实验室,湖北武汉430074 [2]华中科技大学光电子工程系,湖北武汉430074

出　　处：《红外与毫米波学报》2004年第2期99-102,共4页Journal of Infrared and Millimeter Waves

基　　金：国家自然科学基金重点资助项目 (60 10 60 0 3 )

摘　　要：采用新工艺在氮化硅衬底上制备了室温时电阻温度系数为 - 0 .0 2 1K-1的氧化钒薄膜 ,以此为基础 ,利用光刻和反应离子刻蚀工艺在硅衬底上制作了 12 8元氧化钒红外探测器 .为了降低探测器敏感元与衬底间的热导 ,设计制作了自支撑的微桥结构阵列 .测试结果显示探测器的响应率和探测率在 8～ 12 μm的长波红外波段处分别达到10 4V/W和 2× 10 8cmHz1/ 2 W-1.A new method fabricating Vanadium oxides thin films on Si-3 N-4 substrates has been completed, and the temperature coefficient resistance of the thin film has been found to he - 0.021 K-1 at room temperature. Based on the method, 128-element linear uncooled infrared detector arrays are fabricated utilizing pattern and reactive ion etching process. Self-supporting microbridge array has also been designed and fabricated to reduce the thermal conductance between the active area of detectors and the silicon substrate. Test indicates the responsivity and detectivity of detectors approaching 10(4)V/W and 2 x 10(8) cm Hz(1/2) Hz(1/2) W-1 in 8 similar to 12mum IR radiation band, respectively.

关 键 词：红外探测器 微桥结构 微桥阵列 氧化钒薄膜 电阻温度系数 

分 类 号：TN215[电子电信—物理电子学] O484.1[理学—固体物理]