HALO结构pMOSFETs在V_g=V_d/2应力模式下应力相关的热载流子退化  

Stress-Dependent Hot Carrier Degradation for pMOSFETs Structure Under Stress Mode V_g=V_d/2

作　　者：胡靖[1] 赵要[1] 许铭真[1] 谭长华[1] 

机构地区：[1]北京大学微电子学研究所,北京100871

出　　处：《Journal of Semiconductors》2004年第4期436-440,共5页半导体学报（英文版）

基　　金：国家重点基础研究发展规划 (批准号 :G2 0 0 0 0 3 65 0 3 ); MOTOROL A Digital DNA实验室资助项目~~

摘　　要：研究了超薄栅 (2 .5 nm )短沟 HAL O- p MOSFETs在 Vg=Vd/ 2应力模式下不同应力电压时热载流子退化特性 .随着应力电压的变化 ,器件的退化特性也发生了改变 .在加速应力下寿命外推方法会导致过高地估计器件寿命 .在高场应力下器件退化是由空穴注入或者电子与空穴复合引起的 ,随着应力电压的下降器件退化主要是由电子注入引起的 .最后 。Hot carrier stress degradation for short channel pMOSFETs with ultra-thin gate oxides (2.5nm) and HALO structure is investigated under stress mode .V. g=.V. d/2.At high stress voltages,the device degradation is mainly caused by holes to break up Si-H bonds directly or the recombination of electrons and holes.With the decrease of stress voltage,the device degradation is caused by electron injection.At last,the critical voltage for different degradation mechanism is proposed and verified in experiments...

关 键 词：热载流子 一次碰撞电离 二次碰撞电离 复合 

分 类 号：TN386[电子电信—物理电子学]