F掺杂SnO_2透明导电薄膜微结构及性能研究  

MICROSTRUCTURE AND PROPERTIES OF SnO_2∶F FILMS PREPARED BY APCVD METHOD

作　　者：莫建良[1] 陈华[2] 曹涯雁[2] 刘起英[2] 汪建勋[2] 翁文剑[1] 韩高荣[1] 

机构地区：[1]浙江大学硅材料国家重点实验室材料科学与工程学系,杭州310027 [2]浙江大学蓝星新材料技术有限公司,杭州310027

出　　处：《太阳能学报》2004年第2期152-156,共5页Acta Energiae Solaris Sinica

基　　金：国家863高技术计划(2001AA320202)

摘　　要：通过实验测量常压热分解CVD工艺制备的F掺杂SnO2薄膜的方块电阻、膜厚、形貌、微结构、中远红外反射率等性质,详细研究了基板温度对SnO2薄膜微结构的影响和微结构与薄膜电学、光学性能之间的关系。研究发现,将基板温度从375℃提高到525℃以上,薄膜结晶程度大大提高,薄膜厚度从25nm提高到近300nm,方块电阻下降了两个数量级,中远红外的反射率达到了85%以上。Based on the measurements and analysis of square resistance, thickness, morphology, microstructure and reflectance of SnO2: F films in the middle and far infrared range, the effect of substrate temperature on the microstructure of the films, and the dependence of electrical and optical behaviors with the microstructure of the films were investigated. The experimental data showed that the degree of crystallization increases, the film thickness increased from 25 nm to 300 nm, the square resistance was decreased by about 2 orders of magnitude and the reflectance in the middle and far range was more than 0.85 when the substrate temperature was increased from 375°C to 525°C.

关 键 词：CVD F掺杂SnO2薄膜 微结构 性能 

分 类 号：TM615[电气工程—电力系统及自动化]