SOI材料上硅薄膜电池的研究  

CRYSTALLINE SILICON THIN FILM SOLAR CELL ON SOI SUBSTRATES

作　　者：吴虎才[1] 许颖[2] 王文静[2] 励旭东[2] 叶小琴[1] 周宏余[1] 

机构地区：[1]北京师范大学低能核物理研究所,北京100875 [2]北京市太阳能研究所,北京100083

出　　处：《太阳能学报》2004年第2期133-137,共5页Acta Energiae Solaris Sinica

基　　金：国家自然科学基金项目资助(60276032);北京市自然科学基金重点项目资助(2021010);国家重点基础研究发展规划(G2000028208)

摘　　要：用注氧隔离法在单晶硅衬底中形成SiO2隔离层,制备成SOI(SiliconOnInsulator)衬底,用快速化学汽相沉积(RTCVD)法在此衬底上制备硅薄膜,热扩散形成PN结,制备成薄膜太阳电池,电池表面钝化及减反膜采用的是等离子增强化学气相沉积(PECVD)方法制备的SiN,薄膜电池的电极全部由正面引出,制成的23μm厚薄膜电池的光电转换效率为8 12%(1×1cm2,AM1 5,23℃)。扩展电阻的测量表明电池有良好的PN结特性;量子效率测量表明SiN比常规的热氧化SiO2有更好的减反射和钝化作用;电池的暗特性表明电池具有较高的串联电阻,并分析了正面引电极对串联电阻的影响。Crystalline silicon thin film solar cell with the efficiency of 8.12%(1×1cm^2,AM1.5,23℃)was fabricated on SOI(Silicon On Insulator) substrate. The SOI substrate was prepared by SIMOX (Separation by Implanted Oxygen) method. A rapid thermal chemical vapor deposition (RTCVD) step was performed to achieve the active p type thin film layer with thickness of 23μm on the SOI wafers. The n type emitter layer was formed by a thermal phosphorous diffusion at 850℃. Both the front and the back contacts were made on the front side of the solar cell. The measurement of SPR (spreading resistance) and Hall measurement were used to evaluate the quality of the P-N junction. The dark and light I-V characteristics indicated that the cell has high series resistance. The effect of the electrode on series resistance was analyzed. Quantum Efficiency was measured on the samples with and without SiNx antireflection coating which was formed by a plasma enhanced chemical vapor deposition (PECVD) process. The results showed that the solar cells with SiNx antireflection coating has better QE response than the sample without any antireflection coating.

关 键 词：SOI 化学汽相沉积 薄膜 电池转换效率 

分 类 号：TK154[动力工程及工程热物理—热能工程]