多孔硅的能带变化及光致发光的研究  

Research about Influence on Photoluminescence and Annealing to Energe Band for Porous Silicon

作　　者：沈桂芬[1] 范军[1] 张宏庆[1] 付世[1] 丁德宏[1] 姚朋军[1] 

机构地区：[1]辽宁大学物理系,辽宁沈阳110036

出　　处：《微电子学与计算机》2004年第4期113-115,共3页Microelectronics & Computer

摘　　要：多孔硅与硅材料相比,有明显的可见光致发光特性,其原理可用量子限制模型给予解释。文章通过对多孔硅的光致发光、光电子辐射、光电效应和X光吸收方面的实验的讨论,研究了退火对多孔硅导带和价带边缘的量子漂移的影响。对于大多数多孔硅,过高的退火温度可造成多孔硅的导带和价带边缘的量子漂移的改变。Compared to silicon material, porous silicon has obvious characteristic of visible photoluminescence, and its principle can be explained by quantum confinement model. This paper studies the quantum-drift influence on annealing to porous silicon at the edge of valence band and conduction band by discussing the experiment of photoluminescence, photoeletron radiation,photoeffect and X-ray absorption. To most of porous silicon, overhigh annealing temperature can result in quantum-drift change at the edge of valence band and conduction band for porous silicon.

关 键 词：多孔硅 退火 量子限制模型 

分 类 号：O484[理学—固体物理]