Effect of High Temperature Annealing on Characteristics of 4H Silicon Carbide MESFET  

离子注入高温退火对4H-SiC MESFET特性的影响(英文)

作　　者：杨林安[1] 张义门[1] 于春利[1] 张玉明[1] 陈刚[2] 黄念宁[2] 

机构地区：[1]西安电子科技大学微电子研究所,西安710071 [2]南京电子器件研究所,南京210016

出　　处：《Journal of Semiconductors》2004年第5期486-491,共6页半导体学报（英文版）

基　　金：国防科技预研基金资助项目 (批准号 :8.1.7.3 )~~

摘　　要：For very high temperature annealing (1620℃) after ion implantation for 4H silicon carbide (4H SiC),the residual components of Al and O in the alundum furnace impact seriously on the surface of material,which yields the derivation of SiOC.This causes a significant degradation of the 4H SiC surface characteristics according to the results of surface composition analysis.As validity,Ni/SiC ohmic contact measurement illustrates a higher specific contact resistance than the normal value by a factor of 2～3.Consequently the MESFET fabricated with this kind of 4H SiC material results in a degraded I V output performance compared with that of normal 4H SiC MESFET.采用人造刚玉高温炉管对 4 H- Si C进行 16 2 0℃的离子注入后退火 .实验测试发现 ,在刚玉管壁析出的微量铝的作用下 ,Si C表面与残余的氧成分反应生成衍生物 Si OC,造成材料表面粗糙和反应离子刻蚀速率很低 .分别采用该种样片和正常样片制作了单栅 MESFET,对比测试的欧姆接触和 I- V输出特性 。

关 键 词：silicon carbide ANNEALING surface composition analysis ohmic contact I-V characteristics 

分 类 号：TN386[电子电信—物理电子学]