检索规则说明:AND代表“并且”;OR代表“或者”;NOT代表“不包含”;(注意必须大写,运算符两边需空一格)
检 索 范 例 :范例一: (K=图书馆学 OR K=情报学) AND A=范并思 范例二:J=计算机应用与软件 AND (U=C++ OR U=Basic) NOT M=Visual
机构地区:[1]昆明理工大学光电子新材料研究所,昆明650051 [2]昆明物理研究所,昆明650031 [3]北京工业大学国家产学研激光技术中心,北京100022
出 处:《红外技术》2004年第3期53-62,共10页Infrared Technology
摘 要:由于在外界温度变化和磁场作用下表现出巨大的磁电阻效应(CMR),超巨磁电阻材料成为一个热点研究课题。CMR材料在硬盘读出磁头,随机存储器上极具潜力,在磁传感器、光热辐射探测器、场效应晶体管及磁制冷等方面的应用也崭露头角。首先介绍了CMR薄膜材料的结构和机理,接着详细讨论了它们在器件应用上,尤其是在激光感生电压热电电压效应(LITV)、Bolometer、传感器等有关方面的应用进展。最后展望了CMR薄膜未来的应用前景。CMR thin film materials have become a hot task of study because they exhibit very dramatic changes in electric resistivity when temperature is changed and an external magnetic field is applied. Firstly extensive studies have been made on the materials as they have the great potential to be used as HDD read head and MRAM; secondly application on magnetic sensor,optic-thermal radiation detectors, field effect transistor and magnetic refrigerator have become noteworthy . In this paper, the structure and the mechanism of CMR materials are simply presented at first. And then, the late development of the materials on device fabrication, especially on the new laser induced thermoelectric voltage effect, bolometer and sensors, is discussed in detail. Finally, the future perspective of applications of CMR thin film materials is also discussed.
正在载入数据...
正在载入数据...
正在载入数据...
正在载入数据...
正在载入数据...
正在载入数据...
正在载入数据...
正在链接到云南高校图书馆文献保障联盟下载...
云南高校图书馆联盟文献共享服务平台 版权所有©
您的IP:216.73.216.117