基于Monte Carlo模拟的三种不同结构单电子动态存储器特性比较  

Comparison of behaviors of three single-electron dynamic memories with different structures based on Monte Carlo simulation

作　　者：许海霞[1] 李钱光[1] 闵永泉[1] 李志扬[1] 

机构地区：[1]华中师范大学纳米科技研究院,武汉430079

出　　处：《物理学报》2004年第5期1483-1489,共7页Acta Physica Sinica

基　　金：教育部高等学校骨干教师资助计划(批准号:GG140105111009);湖北省自然科学基金资助的课题~~

摘　　要：采用MonteCarlo方法对多隧道结型、对称陷阱型和环型等三种不同结构的单电子动态存储器进行了数值模拟 ,分析了电容、温度等因素对存储器存储时间的影响 ,发现在相同条件下环型和对称陷阱型存储器一般要比多隧道结型存储器的存储时间长 .We have simulated the behaviors of multiple-tunnel-junction, symmetry-trap and ring-type single-electron dynamic memories separately by means of Monte Carlo method. The storage-times of the devices under the influence of such parameters as capacitance and temperature have been analyzed. This revealed that the storage-times of a ring and a symmetric trap-type memory are longer than that of a multiple-tunnel-junction-type memory.

关 键 词：蒙特卡罗模拟 单电子存储器 存储时间 多隧道结型 对称陷阱型 

分 类 号：TP333[自动化与计算机技术—计算机系统结构]