Y_2O_3∶Eu薄膜的制备及其发光性能研究  

Preparation of Y_2O_3∶Eu Thin Film Deposited by Electron Beam Evaporation and Study on Luminescence Properties

作　　者：张晓松[1] 李岚[1] 邹开顺[1] 陶怡[1] 

机构地区：[1]天津理工学院材料物理研究所,天津300191

出　　处：《光电子．激光》2004年第5期549-553,共5页Journal of Optoelectronics·Laser

基　　金：天津市自然科学基金资助项目(013615211);天津市教委资助项目(01 20114);天津市"材料物理与化学"重点学科资助项目

摘　　要：用电子束蒸发方法在ITO基片上生长Y2O3∶Eu荧光薄膜,并在不同条件下退火处理。分别用X射线衍射(XRD)、X射线光电子能谱(KPS)、扫描电子显微镜(SEM)和光致发光(PL)谱表征Y2O3∶Eu荧光薄膜的结构、成分、形貌和发光性能。实验表明:随着温度升高,薄膜的结晶程度提高,弥补了薄膜晶体表面的表面缺陷,提高了薄膜的发光性能;600℃退火处理的光致发光中,617nm和596nm的谱线最强。Y2O3:Eu thin films were grown on indium tin oxide (ITO) substrates by electron beam evaporation method with sintered Y2O3:Eu target, and were annealed in different conditions. The construction, ingredient, surface morphology and luminescence properties of the Y2O3:Eu thin films were tested by X-ray diffraction (XRD), X-ray photoelectron spectroscope, scanning electron microscope and photoluminescence spectra. It is found that crystallization is improved, and the disfigurement on crystal surface is repaired. The luminescent properties of Y2O3:Eu thin films is enhanced with the annealing temperature increase, and the intensity of luminescent peaks at 617 nm and 596 nm is the highest at the annealing temperature of 600°C. And it can be concluded that post-deposition annealing is an effective methods to increase luminescence properties of Y2O3:Eu phosphor thin films.

关 键 词：Y2O3:Eu薄膜 电子束蒸发 场发射显示器 FED 退火处理 发光性能 

分 类 号：TN383[电子电信—物理电子学]